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Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties

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Chem. Commun., 2014, 50,682-684
DOI: 10.1039/C3CC47239F, Communication
Xingfu Wang, Jinhui Tong, Xin Chen, Bijun Zhao, Zhiwei Ren, Danwei Li, Xiangjing Zhuo, Jun Zhang, Hanxiang Yi, Chao Liu, Fang Fang, Shuti Li
Arrays of GaN-based nanowires with controlled physical and chemical properties have been synthesized on patterned silicon without a catalyst.
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